View ndd60n360u1 datasheet:

NDD60N360U1N-Channel Power MOSFET600 V, 360 mWFeatures 100% Avalanche Tested These Devices are Pb-Free, Halogen Free/BFR Free and are RoHShttp://onsemi.comCompliantV(BR)DSS RDS(ON) MAXABSOLUTE MAXIMUM RATINGS (TJ = 25C unless otherwise noted)Parameter Symbol NDD Unit 600 V 360 mW @ 10 VDrain-to-Source Voltage VDSS 600 VGate-to-Source Voltage VGS 25 VN-Channel MOSFETContinuous Drain Steady TC = 25C ID 11 AD (2)Current RqJC StateTC = 100C 6.9Power Dissipation Steady TC = 25C PD 114 WRqJC StateG (1)Pulsed Drain tp = 10 ms IDM 44 ACurrentS (3)Operating Junction and Storage TJ, -55 to CTemperature TSTG +150Source Current (Body Diode) IS 13 A4Single Pulse Drain-to-Source Avalanche EAS 64 mJEnergy (ID = 3.5 A)RMS Isolation Voltage (t = 0.3 sec., VISO - V1R.H. 30%, TA = 25C) (Figure 15)23Peak Diode

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