View ndd60n550u1 datasheet:

NDD60N550U1N-Channel Power MOSFET600 V, 550 mWFeatures 100% Avalanche Tested These Devices are Pb-Free, Halogen Free/BFR Free and are RoHShttp://onsemi.comCompliantV(BR)DSS RDS(ON) MAXABSOLUTE MAXIMUM RATINGS (TJ = 25C unless otherwise noted)600 V 550 mW @ 10 VParameter Symbol NDD UnitDrain-to-Source Voltage VDSS 600 VGate-to-Source Voltage VGS 25 V N-Channel MOSFETContinuous Drain Steady TC = ID 8.2 A D (2)Current RqJC State 25CTC = 5.2100CG (1)Power Dissipation Steady TC = PD 94 WRqJC State 25CS (3)Pulsed Drain Current tp = 10 ms IDM 34 AOperating Junction and Storage TJ, -55 to CTemperature TSTG +15044Source Current (Body Diode) IS 8.2 ASingle Pulse Drain-to-Source Avalanche EAS 54 mJ211Energy (ID = 4 A)323Peak Diode Recovery (Note 1) dv/dt 15 V/nsIPAK DPAKCASE 369D CASE 369CLead Tempe

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