View ndd60n745u1 datasheet:

NDD60N745U1N-Channel Power MOSFET600 V, 745 mWFeatures 100% Avalanche Testedhttp://onsemi.com These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliantV(BR)DSS RDS(ON) MAX600 V 745 mW @ 10 VABSOLUTE MAXIMUM RATINGS (TJ = 25C unless otherwise noted)Parameter Symbol Value UnitN-Channel MOSFETDrain-to-Source Voltage VDSS 600 VD (2)Gate-to-Source Voltage VGS 25 VContinuous Drain Steady TC = 25C ID 6.6 ACurrent RqJC StateTC = 100C 4.2G (1)Power Dissipation Steady TC = 25C PD 84 W RqJC StateS (3)Pulsed Drain tp = 10 ms IDM 27 ACurrent4Operating Junction and Storage TJ, -55 to C4Temperature TSTG +150Source Current (Body Diode) IS 6.6 A211Single Pulse Drain-to-Source Avalanche EAS 38 mJ 323Energy (ID = 2.5 A)IPAK DPAKPeak Diode Recovery (Note 1) dv/dt 15 V/nsCASE 369D CASE 369CSTYLE

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