View ndd60n900u1 datasheet:

NDD60N900U1N-Channel Power MOSFET600 V, 900 mWFeatures 100% Avalanche Testedhttp://onsemi.com These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliantV(BR)DSS RDS(ON) MAX600 V 900 mW @ 10 VABSOLUTE MAXIMUM RATINGS (TJ = 25C unless otherwise noted)Parameter Symbol Value UnitN-Channel MOSFETDrain-to-Source Voltage VDSS 600 VD (2)Gate-to-Source Voltage VGS 25 VContinuous Drain Steady TC = 25C ID 5.7 ACurrent RqJC StateTC = 100C 3.6G (1)Power Dissipation Steady TC = 25C PD 74 W RqJC StatePulsed Drain tp = 10 ms IDM 20 A S (3)CurrentOperating Junction and Storage TJ, -55 to C4Temperature TSTG +150 4Source Current (Body Diode) IS 5.7 A21Single Pulse Drain-to-Source Avalanche EAS 33 mJ 1323Energy (ID = 2 A)IPAK DPAKPeak Diode Recovery (Note 1) dv/dt 15 V/nsCASE 369D CASE 369CSTYLE 2 S

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