View nddp010n25az datasheet:

NDDP010N25AZ Power MOSFET www.onsemi.com 250V, 10A, 420m, N-Channel Features Electrical Connection High Speed Switching Low Gate Charge 2,4 ESD Diode-Protected Gate 100% Avalanche Tested Pb-Free, Halogen Free and RoHS Compliance 1. Gate Specifications 12. Drain 3. Source Absolute Maximum Ratings at Ta = 25C 4. Drain Parameter Symbol Value Unit3Drain to Source Voltage VDSS 250 VV Gate to Source Voltage VGSS 30A Drain Current (DC) ID 10Packing Type:TL Marking Drain Current (Pulse) A IDP 40PW10s, duty cycle1% Power Dissipation 1PD W Tc=25C 52 10N25Junction Temperature Tj 150 C TLLOT No.AZ 55 toStorage Temperature Tstg C +150Source Current (Body Diode) IS 10 AmJ Avalanche Energy (Single Pulse) *1 EAS 15.54Lead Temperature for Soldering C 4TL 260Purpo

Keywords - ALL TRANSISTORS DATASHEET

 nddp010n25az.pdf Design, MOSFET, Power

 nddp010n25az.pdf RoHS Compliant, Service, Triacs, Semiconductor

 nddp010n25az.pdf Database, Innovation, IC, Electricity