View ngd15n41cl ngb15n41cl ngp15n41cl datasheet:

NGD15N41CL,NGB15N41CL,NGP15N41CLPreferred Device Ignition IGBT15 Amps, 410 Voltshttp://onsemi.comN-Channel DPAK, D2PAK and TO-22015 AMPSThis Logic Level Insulated Gate Bipolar Transistor (IGBT) featuresmonolithic circuitry integrating ESD and Over-Voltage clamped410 VOLTSprotection for use in inductive coil drivers applications. Primary usesVCE(on) 3 2.1 V @include Ignition, Direct Fuel Injection, or wherever high voltage andIC = 10 A, VGE . 4.5 Vhigh current switching is required.CFeatures Ideal for Coil-on-Plug Applications DPAK Package Offers Smaller Footprint and Increased Board Space Gate-Emitter ESD ProtectionG RG Temperature Compensated Gate-Collector Voltage Clamp LimitsRGEStress Applied to Load Integrated ESD Diode Protection New Design Increases Unclamped Inductive Switching (UIS) EnergyEPer Area

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