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View ntd12n10 datasheet:

ntd12n10ntd12n10

NTD12N10Power MOSFET12 Amps, 100 VoltsN-Channel Enhancement-Mode DPAKhttp://onsemi.comFeatures Source-to-Drain Diode Recovery Time Comparable to a DiscreteV(BR)DSS RDS(on) TYP ID MAXFast Recovery Diode100 V 165 mW @ 10 V 12 A Avalanche Energy Specified IDSS and RDS(on) Specified at Elevated TemperatureN-Channel Mounting Information Provided for the DPAK PackageD These are Pb-Free DevicesTypical Applications PWM Motor Controls G Power SuppliesS ConvertersMAXIMUM RATINGS (TC = 25C unless otherwise noted)MARKING DIAGRAMSRating Symbol Value Unit& PIN ASSIGNMENTSDrain-to-Source Voltage VDSS 100 Vdc4Drain-to-Source Voltage (RGS = 1.0 MW) VDGR 100 Vdc DrainGate-to-Source Voltage4DPAK- Continuous VGS 20 VdcCASE 369C- Non-Repetitive (tp 10 ms) VGSM 30 Vpk(Surface Mount)21Drain Current

 

Keywords - ALL TRANSISTORS DATASHEET

 ntd12n10.pdf Design, MOSFET, Power

 ntd12n10.pdf RoHS Compliant, Service, Triacs, Semiconductor

 ntd12n10.pdf Database, Innovation, IC, Electricity

 

 
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