View ntgd4167c datasheet:

NTGD4167CPower MOSFETComplementary, 30 V, +2.9/-2.2 A,TSOP-6 DualFeatures Complementary N-Channel and P-Channel MOSFEThttp://onsemi.com Small Size (3 x 3 mm) Dual TSOP-6 Package Leading Edge Trench Technology for Low On ResistanceV(BR)DSS RDS(on) MAX ID MAX (Note 1) Reduced Gate Charge to Improve Switching Response90 mW @ 4.5 V 2.6 AN-Ch Independently Connected Devices to Provide Design Flexibility20 V125 mW @ 2.5 V 2.2 A This is a Pb-Free Device170 mW @ -4.5 V -1.9 AP-ChApplications-20 V300 mW @ -2.5 V -1.0 A DC-DC Conversion Circuits Load/Power Switching with Level ShiftD1 D2MAXIMUM RATINGS (TJ = 25C unless otherwise noted)Parameter Symbol Value UnitDrain-to-Source Voltage VDSS 30 VG1 G2Gate-to-Source Voltage (N-Ch & P-Ch) VGS 12 VN-Channel Steady TA = 25C ID 2.6 AS1 S2Continuous Drain Stat

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