View p0460eis datasheet:

P0460EISN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID2.3 @VGS = 10V600V 4A1.GATE2.DRAIN3.SOURCETO-251(IS)ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 600VVGSGate-Source Voltage 30TC = 25 C4IDContinuous Drain Current2TC = 100 C2.5AIDM20Pulsed Drain Current1,2IAS4Avalanche Current3EAS80 mJAvalanche Energy3TC = 25 C62.5PDPower Dissipation WTC = 100 C25TJ, TSTGOperating Junction & Storage Temperature Range -55 to 150 CTHERMAL RESISTANCE RATINGSTHERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITSJunction-to-Case RqJC 2C / WJunction-to-Ambient RqJA 62.51Pulse width limited by maximum junction temperature.2Limited only by maximum temperature allowed3VDD = 50V , L

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