View ph1825al datasheet:

PH1825ALN-channel TrenchMOS logic level FETRev. 01 22 April 2009 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.1.2 Features and benefits 100% gate resistance tested Optimimzed for use in DC-to-DC converters 100% Ruggedness tested Very low switching and conduction Lead-free packagelosses Logic level compatible1.3 Applications DC-to-DC converters Switched-mode power supplies Notebook computers Voltage regulators1.4 Quick reference dataTable 1. Quick referenceSymbol Parameter Conditions Min Typ Max UnitVDS drain-source voltage Tj 25 C; Tj 150 C - - 25 VID drain current Tmb =25

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