View pn100 pn100a mmbt100 mmbt100a datasheet:

October 2008PN100/PN100A/MMBT100/MMBT100ANPN General Purpose Amplifier This device is designed for general purpose amplifier applications at collector currents to 300mA. Sourced from process 10.CETO-92SOT-23B11. Emitter 2. Base 3. CollectorMark: PN100/PN100AAbsolute Maximum Ratings* Ta = 25C unless otherwise notedSymbol Parameter Ratings UnitsVCEO Collector-Emitter Voltage 45VCBO Collector-Base Voltage 75VEBO Emitter-Base Voltage 6.0IC Collector current - Continuous 500TJ, Tstg Junction and Storage Temperature -55 ~ +150* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.NOTES:1. These ratings are based on a maximum junction temperature of 150 degrees C.2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle opera

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