View pt8205a datasheet:

PT8205A20V Dual N-Channel Enhancement Mode MOSFET VDS= 20V RDS(ON), Vgs@ 2.5V, Ids@ 5.2A = 38m RDS(ON), Vgs@ 4.5V, Ids@ 6A = 28m Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance High Power and Current handing capability Ideal for Li ion battery pack applications 1 8D1 D22 7S1S23 6S1 S24 5G1 G2TSSOP-8Millimeter Millimeter REF. REF. Min. Max. Min. Max. A 1.20 MAX. E1 4.504.30 A1 0.05 0.65BSC0.15. e A2 0.80 1.05 L 0.450.75 b 0.19 0.30 0 10C 0.90 0.20D 2.90 3.00E 6.40BSCMaximum Ratings and Thermal Characteristics (TA = 25oC unless otherwise noted) Parameter Symbol Limit UnitDrain-Source Voltage VDS 20V Gate-Source Voltage VGS 12Continuous Drain Current ID 6A Pulsed Drain Current 1) IDM 20TA = 25oC 1.6Maximum Power Dissipation PD W

Keywords - ALL TRANSISTORS DATASHEET

 pt8205a.pdf Design, MOSFET, Power

 pt8205a.pdf RoHS Compliant, Service, Triacs, Semiconductor

 pt8205a.pdf Database, Innovation, IC, Electricity