View ptw40n50 datasheet:

PTW40N50 500V N-Channel MOSFET General Features BVDSS RDS(ON),typ. ID Advanced Planar Process 500V 85m 46A RDS(ON),typ.=85 m@VGS=10V Low Gate Charge Minimize Switching Loss Rugged Poly silicon Gate Structure Applications BLDC Motor Driver Electric Welder High Efficiency SMPS Ordering Information Part Number Package Brand PTW40N50 TO-3P Absolute Maximum Ratings T =25 unless otherwise specified CSymbol Parameter PTW40N50 Unit VDSS Drain-to-Source Voltage 500 V VGSS Gate-to-Source Voltage 30 Continuous Drain Current 46 ID Continuous Drain Current @ Tc=100 30 A IDM Pulsed Drain Current at VGS=10V[2,4] 180 EAS Single Pulse Avalanche Energy 5000 mJ dv/dt Peak Diode Recovery dv/dt[3] 5.0 V/ns Power Dissipation 540 W PD Derating Factor above 25 4.32 W/ Maximum Temperature for Soldering

Keywords - ALL TRANSISTORS DATASHEET

 ptw40n50.pdf Design, MOSFET, Power

 ptw40n50.pdf RoHS Compliant, Service, Triacs, Semiconductor

 ptw40n50.pdf Database, Innovation, IC, Electricity