View pv501ba datasheet:

PV501BAP-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID7.5m @VGS = -10V -30V -12ASOP- 08ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage -30VVGSGate-Source Voltage 25TA = 25 C-12IDContinuous Drain CurrentTA = 70 C-9.6AIDM-50Pulsed Drain Current1IASAvalanche Current -34EASAvalanche Energy L=0.1mH 57.8 mJTA = 25 C1.8PDPower Dissipation WTA = 70 C1.1TJ, TSTGJunction & Storage Temperature Range -55 to 150 CTHERMAL RESISTANCE RATINGSTHERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITSRqJA 68 C / WJunction-to-Ambient21Pulse width limited by maximum junction temperature.2The value of RqJA is measured with the device mounted on 1in2 FR-4 board with 2oz.Copper.in a still airenvironment

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