View pv551ba datasheet:

PV551BAP-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID20m @VGS = -10V -30V -9ASOP- 08ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage -30VVGSGate-Source Voltage 25TA = 25 C-9IDContinuous Drain CurrentTA = 70 C-7AIDM-40Pulsed Drain Current1IASAvalanche Current -23.5EASAvalanche Energy L=0.1mH 27 mJTA = 25 C3PDWPower Dissipation3TA = 70 C2TJ, TSTGJunction & Storage Temperature Range -55 to 150 CTHERMAL RESISTANCE RATINGSTHERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITSRqJAt 10s 40Junction-to-Ambient2Steady-State RqJA 72 C / WJunction-to-Ambient2Junction-to-Case Steady-State RqJC 301Pulse width limited by maximum junction temperature.2The value of RqJA is measured

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