View pzp003byb datasheet:

PZP003BYBN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID30V 6 @VGS = 4V 110mASOT-523 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVGSGate-Source Voltage 20 VTA = 25 C110IDContinuous Drain Current1TA = 100 C70mAIDM400Pulsed Drain Current2IASAvalanche Current 300EASAvalanche Energy L = 0.1mH 0.5 mJTA = 25 C150PDPower Dissipation mWTA = 100 C60TJ, TSTGOperating Junction & Storage Temperature Range -55 to 150 CTHERMAL RESISTANCE RATINGSTHERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITSJunction-to-Ambient RqJA 833 C / W1Limited by maximum junction temperature.2Limited by package.Ver 1.0 1 2012/4/12PZP003BYBN-Channel Enhancement Mode MOSFETELECTRICAL CHARACTERISTICS (TJ = 25 C, Unless Otherwise Not

Keywords - ALL TRANSISTORS DATASHEET

 pzp003byb.pdf Design, MOSFET, Power

 pzp003byb.pdf RoHS Compliant, Service, Triacs, Semiconductor

 pzp003byb.pdf Database, Innovation, IC, Electricity