View qm2601s datasheet:

QM2601S N-Ch and P-Ch Fast Switching MOSFETsGeneral Description Product SummeryThe QM2601S is the highest performance trench N-ch and P-ch MOSFETs with extreme high cell BVDSS RDSON ID density , which provide excellent RDSON and gate 20V 18m 7.2Acharge for most of the small power switching and -20V 50m -4.5Aload switch applications. The QM2601S meet the RoHS and Green Product Applications requirement with full function reliability approved. High Frequency Point-of-Load Synchronous Small power switching for MB/NB/UMPC/VGA Features Networking DC-DC Power System Load Switch Advanced high cell density Trench technology Super Low Gate Charge Dual SOP8 Pin Configuration Excellent Cdv/dt effect decline D2 D2 D1D1 Green Device Available G2 Absolute Maximum Ratings G1S2S1 Rating Symbol Parameter Units N-Ch P-Ch

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 qm2601s.pdf Design, MOSFET, Power

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