View qm2606c1 datasheet:

QM2606C1 N-Ch and P-Ch Fast Switching MOSFETsGeneral Description Product SummeryThe QM2606C1 is the highest performance trench N-ch and P-ch MOSFETs with extreme high cell BVDSS RDSON ID density , which provide excellent RDSON and gate 20V 90m 1.52Acharge for most of the small power switching and -20V 240m -1Aload switch applications. The QM2606C1 meet the RoHS and Green Applications Product requirement with full function reliability approved. High Frequency Point-of-Load Synchronous s Features Small power switching for MB/NB/UMPC/VGA Networking DC-DC Power System Advanced high cell density Trench technology Load Switch Super Low Gate Charge Excellent Cdv/dt effect decline SOT363 (SC-70-6L ) Pin Configuration Green Device Available Absolute Maximum Ratings Rating Symbol Parameter Units N-Channel P-ChannelVDS Dra

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