View r07ds0409ej 2sk3210ls datasheet:

Preliminary Datasheet 2SK3210(L), 2SK3210(S) R07DS0409EJ0400(Previous: REJ03G0414-0300)Silicon N Channel MOS FET Rev.4.00High Speed Power Switching May 16, 2011Features Low on-resistance RDS = 40 m typ. High speed switching 4 V gate drive device can be driven from 5 V source Outline RENESAS Package code: PRSS0004AE-A RENESAS Package code: PRSS0004AE-B(Package name: LDPAK(L)) (Package name: LDPAK(S)-(1))4 D41. GateG2. Drain3. Source4. Drain12312 S3Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings UnitDrain to source voltage VDSS 150 VGate to source voltage VGSS 20 VDrain current ID 30 A Drain peak current ID (pulse)Note1 120 ABody-drain diode reverse drain current IDR 30 AAvalanche current IAPNote3 30 A Avalanche energy EARNote3 67 mJChannel dissipation PchNote2 100 WChannel tempera

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