View r07ds0433ej 2sj496 datasheet:

Preliminary Datasheet R07DS0433EJ04002SJ496 (Previous: REJ03G0870-0300)Rev.4.00Silicon P Channel MOS FET Jun 07, 2011Description High speed power switching Features Low on-resistance RDS (on) = 0.12 typ. (at VGS = 10 V, ID = 2.5 A) 4 V gate drive devices. Large current capacitance ID = 5 A Outline RENESAS Package code: PRSS0003DC-A(Package name: TO-92 Mod)D1. SourceG2. Drain3. Gate321SAbsolute Maximum Ratings (Ta = 25C) Item Symbol Value UnitDrain to source voltage VDSS 60 VGate to source voltage VGSS 20 VDrain current ID 5 ADrain peak current ID (pulse) Note 1 20 ABody to drain diode reverse drain current IDR 5 AAvalanche current IAP Note 3 5 AAvalanche energy EAR Note 3 2.14 mJChannel dissipation Pch Note 2 0.9 WChannel temperature Tch 150 C Storage temperature

Keywords - ALL TRANSISTORS DATASHEET

 r07ds0433ej 2sj496.pdf Design, MOSFET, Power

 r07ds0433ej 2sj496.pdf RoHS Compliant, Service, Triacs, Semiconductor

 r07ds0433ej 2sj496.pdf Database, Innovation, IC, Electricity