View r07ds0435ej rjl5012dpe datasheet:

Preliminary Datasheet RJL5012DPE R07DS0435EJ0200(Previous: REJ03G1745-0100)Silicon N Channel MOS FET Rev.2.00High Speed Power Switching Jun 14, 2011Features Built-in fast recovery diode Low on-resistance RDS(on) = 0.56 typ. (at ID = 6 A, VGS = 10 V, Ta = 25 C) Low leakage current High speed switching Outline RENESAS Package code: PRSS0004AE-B(Package name: LDPAK(S)-(1) )D41. Gate2. Drain3. SourceG4. Drain123SAbsolute Maximum Ratings (Ta = 25C) Item Symbol Ratings UnitDrain to source voltage VDSS 500 VGate to source voltage VGSS 30 VDrain current ID 12 ADrain peak current ID (pulse)Note1 36 ABody-drain diode reverse drain current IDR 12 ABody-drain diode reverse drain peak current IDR (pulse)Note1 36 AAvalanche current IAPNote3 3 AAvalanche energy EARNote3 0.5 mJChannel dissipatio

Keywords - ALL TRANSISTORS DATASHEET

 r07ds0435ej rjl5012dpe.pdf Design, MOSFET, Power

 r07ds0435ej rjl5012dpe.pdf RoHS Compliant, Service, Triacs, Semiconductor

 r07ds0435ej rjl5012dpe.pdf Database, Innovation, IC, Electricity