View rej03g0474 rjk2009dpm datasheet:

Preliminary Datasheet RJK2009DPM REJ03G0474-0300Silicon N Channel MOS FET Rev.3.00High Speed Power Switching Jun 30, 2010Features Low on-resistance Low leakage current High speed switching Outline RENESAS Package code: PRSS0003ZA-A(Package name: TO-3PFM)D1. Gate2. DrainG3. SourceS123Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings UnitDrain to source voltage VDSS 200 VGate to source voltage VGSS 30 VDrain current ID 40 ADrain peak current ID (pulse)Note1 160 ABody-drain diode reverse drain current IDR 40 ABody-drain diode reverse drain peak current IDR (pulse)Note1 160 AAvalanche current IAPNote3 40 AAvalanche energy EARNote3 106 mJChannel dissipation Pch Note2 60 WChannel to case thermal impedance ch-c 2.08 C/W Channel temperature Tch 150 C Storage temperature Tstg 55 to +150

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