View rfp12p08 rfp12p10 datasheet:

RFP12P08, RFP12P10Data Sheet January 200212A, 80V and 100V, 0.300 Ohm, P-Channel FeaturesPower MOSFETs 12A, 80V and 100VThe RFP12P08, and RFP12P10 are P-Channel rDS(ON) = 0.300enhancement mode silicon gate power field effect transistors SOA is Power Dissipation Limiteddesigned for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers Nanosecond Switching Speedsfor high power bipolar switching transistors requiring high Linear Transfer Characteristicsspeed and low gate drive power. These types can be operated directly from integrated circuits. High Input ImpedanceFormerly developmental type TA17511. Majority Carrier Device Related LiteratureOrdering Information- TB334 Guidelines for Soldering Surface Mount PART NUMBER PACKAGE BRANDComponents to PC Boards

Keywords - ALL TRANSISTORS DATASHEET

 rfp12p08 rfp12p10.pdf Design, MOSFET, Power

 rfp12p08 rfp12p10.pdf RoHS Compliant, Service, Triacs, Semiconductor

 rfp12p08 rfp12p10.pdf Database, Innovation, IC, Electricity