View rjk005n03 datasheet:

RJK005N03 Transistors 2.5V Drive Nch MOS FET RJK005N03 Structure External dimensions (Unit : mm) Silicon N-channel MOS FET SMT32.9 1.10.4 0.8 Features (3)1) Low On-resistance. 2) Low voltage drive (2.5V drive). (2) (1)0.95 0.950.151.9(1)Source ApplicationsEach lead has same dimensions(2)GateSwitching (3)Drain Abbreviated symbol : KV Packaging specifications and hFE Inner circuit (3)Package TapingType Code T146Basic ordering unit (pieces) 3000RJK005N03 (2)2(1) Source1 (2) Gate(3) Drain(1)1 ESD PROTECTION DIODE 2 BODY DIODE Absolute maximum ratings (Ta=25C) Parameter Symbol Limits UnitDrain-source voltage V 30 VDSSGate-source voltage V 12 VGSSContinuous I 500 mADDrain current1Pulsed I 2.0 ADPSource current Continuous I 200 mAS(Body Diode) 1Pulsed I 800 mAS

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