View rjk2006dpe datasheet:

Isc N-Channel MOSFET Transistor RJK2006DPEFEATURESWith To-252(DPAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 200 VDSSV Gate-Source Voltage 30 VGSSDrain Current-ContinuousTc=25I 40 ADTc=100I Drain Current-Single Pulsed 100 ADMP Total Dissipation @T =25 100 WD CT Max. Operating Junction Temperature 150 chStorage Temperature -55~150 TstgTHERMAL CHARACTERISTICSSYMBOL PARAMETER MAX UNIT/WRth(ch-c) Channel-to-case thermal resistance 1.25/WRth(ch-a) Channel-to-ambient thermal resistance 401isc websitewww.iscsemi.cn isc & iscsemi

Keywords - ALL TRANSISTORS DATASHEET

 rjk2006dpe.pdf Design, MOSFET, Power

 rjk2006dpe.pdf RoHS Compliant, Service, Triacs, Semiconductor

 rjk2006dpe.pdf Database, Innovation, IC, Electricity