View s8050 datasheet:

S8050NPN General Purpose TransistorsTO-921. EMITTER122. BASE33. COLLECTORABSOLUTE MAXIMUM RATINGS (Ta=25 C)Rating SymbolValue UnitCollector-Emitter Voltage VCEO 25 VdcCollector-Base Voltage VCBO 40VdcEmitter-Base VOltage VEBO5.0 VdcCollector Current IC500 mAdcPD 0.625Total Device Dissipation T =25 C WAJunction Temperature T 150j CStorage, Temperature Tstg C-55 to +150ELECTRICAL CHARACTERISTICSCharacteristics Symbol Min Max Unit-Collector-Emitter Breakdown Voltage (IC= 0.1 mAdc, IB=0) V(BR)CEO 25VdcCollector-Base Breakdown Voltage (IC= 100 Adc, IE=0) V(BR)CBO 40 - Vdc-VdcV(BR)EBO 5.0Emitter-Base Breakdown Voltage (IE= 100 Adc, IC=0)uAdcICE0Collector Cutoff Current (V = 20 Vdc, I =0) - 0.1CEBICBO -0.1 uAdcCollector Cutoff Current (V = 40 Vdc, IE=0)CB-IEBOdEmitter Cutoff Current (VEB=

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