View s8050t datasheet:

S8050T NPN Silicon General Purpose Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen and lead free TO-92FEATURES 4.55 0.2 3.5 0.2 (1.27 Typ.) Complimentary to S8550T 1.25 0.2 Collector Current: IC = 0.5 A 1 2 32.54 0.11: Emitter2: Base3: Collector0.080.43 0.070.46 0.1ABSOLUTE MAXIMUM RATINGS at Ta = 25C Parameter Symbol Ratings UnitCollector to Base Voltage VCBO 40 VCollector to Emitter Voltage VCEO 25 VEmitter to Base Voltage VEBO 5 VmA Collector Currrent IC 500Total Power Dissipation PD 625 mWJunction, Storage Temperature TJ, TSTG +150, -55 ~ +150 ELECTRICAL CHARACTERISTICS (TAMB = 25C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test ConditionsCollector-base Breakdown Voltage V(BR)CBO 40 - - V IC = 100 A, IE = 0 Collector-emitter Breakdown V

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