View s9014w datasheet:

S901 4WTRANSISTOR(NPN)SOT323 FEATURES Complementary to S9015W Small Surface Mount Package MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit 1. BASE V Collector-Base Voltage 50 V CBO2. EMITTER V Collector-Emitter Voltage 45 V CEO3. COLLECTOR V Emitter-Base Voltage 5 V EBOIC Collector Current 100 mA P Collector Power Dissipation 200 mW CR Thermal Resistance From Junction To Ambient 625 /W JAT Junction Temperature 150 jT Storage Temperature -55+150 stgELECTRICAL CHARACTERISTICS (Ta=25 unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V I =100A, I =0 50 V (BR)CBO C ECollector-emitter breakdown voltage V I =100A, I =0 45 V (BR)CEO C BEmitter-base breakdown voltage V(BR)EBO IE=100A, IC=0 5 V Collector

Keywords - ALL TRANSISTORS DATASHEET

 s9014w.pdf Design, MOSFET, Power

 s9014w.pdf RoHS Compliant, Service, Triacs, Semiconductor

 s9014w.pdf Database, Innovation, IC, Electricity