View si1901dl datasheet:

Si1901DLNew ProductVishay SiliconixP-Channel 20-V (D-S) MOSFETPRODUCT SUMMARYVDS (V) rDS(on) (W) ID (mA)3.8 @ VGS = 4.5 V 18020205.0 @ VGS = 2.5 V 100SOT-363SC-70 (6-Leads)Marking CodeS1 1 6 D1QD XXG1 2 5 G2Lot Traceabilityand Date Code4D2 3 S2Part # CodeTop ViewABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)Parameter Symbol Limit UnitDrain-Source Voltage VDS 20VVGate-Source Voltage VGS"8TA = 25_C180Continuous Drain Current (TJ = 150_C)a IDContinuous Drain Current (TJ = 150 C)a IDmAATA = 70_C 140Pulsed Drain Current IDM 500TA = 25_C 0.20Maximum Power Dissipationa PD WMaximum Power Dissipationa PD WTA = 70_C 0.13Operating Junction and Storage Temperature Range TJ, Tstg 55 to 150 _CTHERMAL RESISTANCE RATINGSParameter Symbol Limit UnitMaximum Junction-to-Am

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