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Si2301ADSNew ProductVishay SiliconixP-Channel 2.5-V (G-S) MOSFETPRODUCT SUMMARYVDS (V) rDS(on) (W) ID (A)b0.130 @ VGS = 4.5 V 2.0200.190 @ VGS = 2.5 V 1.6TO-236(SOT-23)G 13 DS 2Top ViewSi2301DS (1A)**Marking CodeABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)Parameter Symbol 5 sec Steady State UnitDrain-Source Voltage VDS 20VGate-Source Voltage VGS "8TA= 25_C 2.0 1.75Continuous Drain Current (TJ = 150_C)b ID_TA= 70_C 1.6 1.4APulsed Drain Currenta IDM 10Continuous Source Current (Diode Conduction)b IS 0.75 0.6TA= 25_C 0.9 0.7Power Dissipationb PD WTA= 70_C 0.57 0.45Operating Junction and Storage Temperature Range TJ, Tstg 55 to 150 _CTHERMAL RESISTANCE RATINGSParameter Symbol Typical Maximum UnitMaximum Junction-to-Ambientb 115 140RthJA _C/W_Maximum Junction

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