View si2301bds datasheet:

SMD Type MOSFETP-Channel Enhancement MOSFET SI2301BDS (KI2301BDS)SOT-23Unit: mm Features+0.12.9 -0.10.4+0.1-0.1 VDS (V) =-20V3 RDS(ON) 100m (VGS =-4.5V) RDS(ON) 150m (VGS =-2.5V)1 2+0.1+0.050.95 -0.1 0.1-0.01+0.11.9 -0.1G 11.Gate3 D2.SourceS 23.Drain Absolute Maximum Ratings Ta = 25Parameter Symbol 5 sec Steady State Unit Drain-Source Voltage VDS -20V Gate-Source Voltage VGS 8 Continuous Drain Current *1 Ta=25 -2.4 -2.2IDA Ta=70 -1.9 -1.8 Pulsed Drain Current *2 IDM -10 Power Dissipation *1 Ta=25 0.9 0.7PD W Ta=70 0.57 0.45 Thermal Resistance.Junction- to-Ambient *1 120 145RthJA /W *3 140 175 Junction Temperature TJ 150 Storage Temperature Range Tstg -55 to 150 *1 Surface Mounted on FR4 Board, t 5 sec.*2 Pulse width limited by maximum jun

Keywords - ALL TRANSISTORS DATASHEET

 si2301bds.pdf Design, MOSFET, Power

 si2301bds.pdf RoHS Compliant, Service, Triacs, Semiconductor

 si2301bds.pdf Database, Innovation, IC, Electricity