View si2301ds-3 datasheet:

SMD Type MOSFETP-Channel Enhancement MOSFET SI2301DS (KI2301DS)SOT-23-3Unit: mm+0.22.9-0.1+0.10.4 -0.1 Features3 VDS (V) =-20V RDS(ON) 100m (VGS =-4.5V) RDS(ON) 150m (VGS =-2.5V)1 2+0.02+0.10.15 -0.020.95 -0.1+0.11.9 -0.2G 13 D1. GateS 22. Source3. Drain Absolute Maximum Ratings Ta = 25Parameter Symbol 5 sec Steady State Unit Drain-Source Voltage VDS -20V Gate-Source Voltage VGS 8 Continuous Drain Current Ta=25 -2.4 -2.2ID(TJ =150) *1A Ta=70 -1.9 -1.8 Pulsed Drain Current *2 IDM -10 Power Dissipation *1 Ta=25 0.9 0.7PD W Ta=70 0.57 0.45 Thermal Resistance.Junction- to-Ambient *1 120 145RthJA /W *3 140 175 Junction Temperature TJ 150 Storage Temperature Range Tstg -55 to 150 *1 Surface Mounted on FR4 Board, t 5 sec.*2 Pulse width

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