View si2301ds datasheet:

SMD Type MOSFETP-Channel Enhancement MOSFET SI2301DS (KI2301DS) FeaturesSOT-23Unit: mm+0.12.9 -0.1 VDS (V) =-20V+0.10.4-0.1 RDS(ON) 130m (VGS =-4.5V)3 RDS(ON) 190m (VGS =-2.5V)1 2+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.1G 11.Gate3 D2.SourceS 23.Drain Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS -20V Gate-Source Voltage VGS8 Continuous Drain Current *1 Ta=25 -2.3IDA Ta=70 -1.5 Pulsed Drain Current *2 IDM -10 Power Dissipation *1 Ta=25 1.25PD W Ta=70 0.8 Thermal Resistance.Junction- to-Ambient *1 100RthJA /W Thermal Resistance.Junction- to-Ambient *3 166 Junction Temperature TJ 150 Tstg -55 to 150Storage Temperature Range *1 Surface Mounted on FR4 Board, t 5 sec. *2 Pulse width limited by maximum

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