View sml40h28 datasheet:

SML40H28TO258 Package Outline.Dimensions in mm (inches)6.86 (0.270)NCHANNEL6.09 (0.240)17.65 (0.695)17.39 (0.685)1.14 (0.707)ENHANCEMENT MODE0.88 (0.035)HIGH VOLTAGEPOWER MOSFETS4.19 (0.165)3.94 (0.155)Dia.1 2 3VDSS 400VID(cont) 28ARDS(on) 0.1405.08 (0.200) 3.56 (0.140)BSC BSC Faster Switching1.65 (0.065)1.39 (0.055) Lower LeakageTyp. TO258 Hermetic PackagePin 1 Drain Pin 2 Source Pin 3 GateDStarMOS is a new generation of high voltageNChannel enhancement mode power MOSFETs.This new technology minimises the JFET effect,Gincreases packing density and reduces the on-resistance. StarMOS also achieves fasterswitching speeds through optimised gate layout.SABSOLUTE MAXIMUM RATINGS (Tcase = 25C unless otherwise stated)Drain Source Voltage 400 VVDSSContinuous Drain C

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