View spd03n60c3 spu03n60c3 datasheet:
VDS Tjmax 650 VjmaxFeature 1.4 DS(on) New revolutionary high voltage technology .2 AD Ultra low gate chargePGTO251 PGTO252 Periodic avalanche rated Extreme dv/dt rated High peak current capability Improved transconductanceType Package Ordering Cde MarkingSPD0 N60C PGTO252 Q67040S4421 0 N60C SPU0 N60C PGTO251 0 N60C Maximum RatingsParameter SymbI VaIue UnitAContinuous drain current DTC = 25 C .2TC = 100 C 29.6Pulsed drain current tp limited by Tjmax D puls100 m Avalanche energy single pulse AS = 2.4 A VDD = 50 VDEAR 0.2Avalanche energy repetitive tA limited by Tjmax1) = .2 A VDD = 50 VD .2 AAvalanche current repetitive tA limited by Tjmax A Gate source voltage static VGS V20VGSGate source voltage AC (f >1Hz) 0Ptot 8 WPower dissipation = 25CCCOperati
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spd03n60c3 spu03n60c3.pdf Design, MOSFET, Power
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