View spd03n60s5 datasheet:

isc N-Channel MOSFET Transistor SPD03N60S5,ISPD03N60S5FEATURESStatic drain-source on-resistance:RDS(on)1.4Enhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONImproved transconductanceABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 600 VDSSV Gate-Source Voltage 20 VGSI Drain Current-Continuous 3.2 ADI Drain Current-Single Pulsed 5.7 ADMP Total Dissipation @T =25 38 WD CMax. Operating Junction Temperature 150 TjStorage Temperature -55~150 TstgTHERMAL CHARACTERISTICSSYMBOL PARAMETER MAX UNITChannel-to-case thermal resistance/WRth(j-c) 3.3Channel-to-ambient thermal resistance/WRth(j-a) 751isc websitewww.iscsemi.cn isc & iscsemi is registered trademarkisc N

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