All Transistors. Datasheet

 

View spd03n60s5 spu03n60s5 datasheet:

spd03n60s5_spu03n60s5spd03n60s5_spu03n60s5

SPU03N60S5SPD03N60S5Cool MOS Power TransistorVDS600 VFeatureRDS(on) 1.4 New revolutionary high voltage technologyID 3.2 A Ultra low gate chargePG-TO252 PG-TO251 Periodic avalanche rated Extreme dv/dt rated2 Ultra low effective capacitances33121 Improved transconductanceType Package Ordering Code Marking03N60S5SPU03N60S5 PG-TO251 Q67040-S4227SPD03N60S5 PG-TO252 Q67040-S4187 03N60S5Maximum RatingsParameter Symbol Value UnitAContinuous drain current IDTC = 25 C 3.2TC = 100 C 25.7Pulsed drain current, tp limited by Tjmax ID puls100 mJAvalanche energy, single pulse EASID = 2.4 A, VDD = 50 VEAR 0.2Avalanche energy, repetitive tAR limited by Tjmax1)ID = 3.2 A, VDD = 50 V3.2 AAvalanche current, repetitive tAR limited by Tjmax IARGate source voltage VGS V20VGSGate source volta

 

Keywords - ALL TRANSISTORS DATASHEET

 spd03n60s5 spu03n60s5.pdf Design, MOSFET, Power

 spd03n60s5 spu03n60s5.pdf RoHS Compliant, Service, Triacs, Semiconductor

 spd03n60s5 spu03n60s5.pdf Database, Innovation, IC, Electricity

 

 
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