View spd04n50c3 datasheet:

isc N-Channel MOSFET Transistor SPD04N50C3,ISPD04N50C3FEATURESStatic drain-source on-resistance:RDS(on)0.95Enhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONImproved transconductanceABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 560 VDSSV Gate-Source Voltage 20 VGSI Drain Current-Continuous 4.5 ADI Drain Current-Single Pulsed 13.5 ADMP Total Dissipation @T =25 50 WD CT Max. Operating Junction Temperature 150 jT Storage Temperature -55~150 stgTHERMAL CHARACTERISTICSSYMBOL PARAMETER MAX UNITChannel-to-case thermal resistance/WRth(j-c) 2.5Channel-to-ambient thermal resistance/WRth(j-a) 621isc websitewww.iscsemi.cn isc & iscsemi is registered trademarkisc N

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