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View spd04n60s5 datasheet:

spd04n60s5spd04n60s5

isc N-Channel MOSFET Transistor SPD04N60S5,ISPD04N60S5FEATURESStatic drain-source on-resistance:RDS(on)0.95Enhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONImproved transconductanceABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 600 VDSSV Gate-Source Voltage 20 VGSI Drain Current-Continuous 4.5 ADI Drain Current-Single Pulsed 9 ADMP Total Dissipation @T =25 50 WD CMax. Operating Junction Temperature 150 TjStorage Temperature -55~150 TstgTHERMAL CHARACTERISTICSSYMBOL PARAMETER MAX UNITChannel-to-case thermal resistance/WRth(j-c) 2.5Channel-to-ambient thermal resistance/WRth(j-a) 621isc websitewww.iscsemi.cn isc & iscsemi is registered trademarkisc N-

 

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