View spd04n80c3 datasheet:

isc N-Channel MOSFET Transistor SPD04N80C3,ISPD04N80C3FEATURESStatic drain-source on-resistance:RDS(on)1.3Enhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh peak current capabilityABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 800 VDSSV Gate-Source Voltage 20 VGSI Drain Current-Continuous 4 ADI Drain Current-Single Pulsed 12 ADMP Total Dissipation @T =25 63 WD CMax. Operating Junction Temperature 150 TjStorage Temperature -55~150 TstgTHERMAL CHARACTERISTICSSYMBOL PARAMETER MAX UNITChannel-to-case thermal resistance/WRth(j-c) 2Channel-to-ambient thermal resistance/WRth(j-a) 621isc websitewww.iscsemi.cn isc & iscsemi is registered trademarkisc N-C

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