View spd06n60c3 datasheet:

isc N-Channel MOSFET Transistor SPD06N60C3,ISPD06N60C3FEATURESStatic drain-source on-resistance:RDS(on)0.75Enhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh peak current capabilityABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 600 VDSSV Gate-Source Voltage 20 VGSI Drain Current-Continuous 6.2 ADI Drain Current-Single Pulsed 18.6 ADMP Total Dissipation @T =25 74 WD CT Max. Operating Junction Temperature 150 jT Storage Temperature -40~150 stgTHERMAL CHARACTERISTICSSYMBOL PARAMETER MAX UNITChannel-to-case thermal resistance/WRth(j-c) 1.7Channel-to-ambient thermal resistance/WRth(j-a) 751isc websitewww.iscsemi.cn isc & iscsemi is registered trademarkis

Keywords - ALL TRANSISTORS DATASHEET

 spd06n60c3.pdf Design, MOSFET, Power

 spd06n60c3.pdf RoHS Compliant, Service, Triacs, Semiconductor

 spd06n60c3.pdf Database, Innovation, IC, Electricity