View spd06n60c3 datasheet:

SPD06N60C3CoolMOSTM Power TransistorProduct SummaryFeaturesV @ T 650 VDS j,max New revolutionary high voltage technologyR 0.75DS(on),max Ultra low gate chargeI 6.2 AD Periodic avalanche rated High peak current capability Ultra low effective capacitancesPG-TO252 Extreme dv /dt rated Improved transconductanceType Package Ordering Code MarkingSPD06N60C3 PG-TO252 Q67040-S4630 06N60C3Maximum ratings, at T =25 C, unless otherwise specifiedjParameter Symbol Conditions Value UnitI T =25 CContinuous drain current 6.2 AD CT =100 C 3.9CI T =25 C 18.6Pulsed drain current1) D,pulse CE I =3.1 A, V =50 VAvalanche energy, single pulse 200 mJAS D DD1),2)E I =6.2 A, V =50 V 0.5Avalanche energy, repetitive tAR D DDAR1)I 6.2Avalanche current, repetitive t AARARI =6.2 A, V =480 V, D DS

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