View spd06n80c3 datasheet:

isc N-Channel MOSFET Transistor SPD06N80C3,ISPD06N80C3FEATURESStatic drain-source on-resistance:RDS(on)0.9Enhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh peak current capabilityABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 800 VDSSV Gate-Source Voltage 20 VGSI Drain Current-Continuous 6 ADI Drain Current-Single Pulsed 18 ADMP Total Dissipation @T =25 83 WD CMax. Operating Junction Temperature 150 TjStorage Temperature -55~150 TstgTHERMAL CHARACTERISTICSSYMBOL PARAMETER MAX UNITChannel-to-case thermal resistance/WRth(j-c) 1.5Channel-to-ambient thermal resistance/WRth(j-a) 621isc websitewww.iscsemi.cn isc & iscsemi is registered trademarkisc N

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