View spd06n80c3 datasheet:

SPD06N80C3CoolMOSTM Power TransistorProduct SummaryFeaturesV 800 VDS New revolutionary high voltage technologyR @ Tj = 25C 0.9DS(on)max Extreme dv/dt ratedQ 31 nCg,typ High peak current capability Qualified according to JEDEC1) for target applications Pb-free lead plating; RoHS compliantPG-TO252-3 Ultra low gate charge Ultra low effective capacitancesCoolMOSTM 800V designed for: Industrial application with high DC bulk voltage Switching Application ( i.e. active clamp forward ) Type Package MarkingSPD06N80C3 PG-TO252-3 06N80C3Maximum ratings, at T =25 C, unless otherwise specifiedjParameter Symbol Conditions Value UnitI T =25 CContinuous drain current 6 AD AT =100 C 3.8AI T =25 C 18Pulsed drain current2) D,pulse AE I =1.2 A, V =50 VAvalanche energy, single pulse 230 mJAS D D

Keywords - ALL TRANSISTORS DATASHEET

 spd06n80c3.pdf Design, MOSFET, Power

 spd06n80c3.pdf RoHS Compliant, Service, Triacs, Semiconductor

 spd06n80c3.pdf Database, Innovation, IC, Electricity