View ssf11ns60 datasheet:

SSF11NS60 Main Product Characteristics: VDSS 600V RDS(on) 0.36 (typ.) ID 11A Marking a nd p in Sche ma ti c di agr a m TO220 Assignment Features and Benefits: Feathers: High dv/dt and avalanche capabilities 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Description: The SSF11NS60 series MOSFETs is a new technology, which combines an innovative super junction technology and advance process. This new technology achieves low Rdson, energy saving, high reliability and uniformity, superior power density and space saving. Absolute max Rating: Symbol Parameter Max. Units ID @ TC = 25 Continuous Drain Current, VGS @ 10V 11 C I @ TC = 100 Continuous Drain Current, V @ 10V 7 A C D GSI Pulsed Drain Current 44 DMPower Dissipation 162 W P @TC = 25C DLinear D

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