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View ssf11ns60f datasheet:

ssf11ns60fssf11ns60f

SSF11NS60F Main Product Characteristics: VDSS 600V RDS(on) 0.36 (typ.) ID 11A Marking and p in TO220F Schematic diagram Assignment Features and Benefits: Feathers: High dv/dt and avalanche capabilities 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Description: The SSF11NS60F series MOSFETs is a new technology, which combines an innovative super junction technology and advance process. This new technology achieves low Rdson, energy saving, high reliability and uniformity, superior power density and space saving. Absolute max Rating: Symbol Parameter Max. Units ID @ TC = 25 Continuous Drain Current, V @ 10V 11 C GSI @ TC = 100 Continuous Drain Current, V @ 10V 7 A C D GSI Pulsed Drain Current 44 DMPower Dissipation 32.8 W P @TC = 25C DLinear Dera

 

Keywords - ALL TRANSISTORS DATASHEET

 ssf11ns60f.pdf Design, MOSFET, Power

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