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ssf11ns60ufssf11ns60uf

SSF11NS60UF Main Product Characteristics: VDSS 600V RDS(on) 0.32 (typ.) ID 11A Marking and pin TO-220F S che mati c di ag ra m Assignment Features and Benefits: Feathers: High dv/dt and avalanche capabilities 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Description: The SSF11NS60UF series MOSFETs is a new technology, which combines an innovative super junction technology and advance process. This new technology achieves low Rdson, energy saving, high reliability and uniformity, superior power density and space saving. Absolute max Rating: Symbol Parameter Max. Units ID @ TC = 25 Continuous Drain Current, V @ 10V 11 C GSI @ TC = 100 Continuous Drain Current, V @ 10V 7 A C D GSI Pulsed Drain Current 44 DMPower Dissipation 31 W P @TC = 25C DLinea

 

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