View ssp2n80a datasheet:

Advanced Power MOSFETFEATURESBVDSS = 800 V Avalanche Rugged TechnologyRDS(on) = 6.0 Rugged Gate Oxide Technology Lower Input CapacitanceID = 2 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 A (Max.) @ VDS = 800V Low RDS(ON) : 4.688 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic Value UnitsVDSS Drain-to-Source Voltage 800 V Continuous Drain Current (TC=25 ) 2IDAContinuous Drain Current (TC=100 ) 1.31IDM Drain Current-Pulsed 8O A_VGS Gate-to-Source Voltage V2EAS Single Pulsed Avalanche Energy 213O mJIAR Avalanche Current 1 2AOEAR Repetitive Avalanche Energy 81 mJOdv/dt Peak Diode Recovery dv/dt 3 2.0V/nsOTotal Power Dissipation (TC=25 ) 80WPDLinear Derating Factor 0.64W/ Operating Junction and- 55 to +15

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