View ssu2n80a datasheet:

Advanced Power MOSFETFEATURESBVDSS = 800 V Avalanche Rugged TechnologyRDS(on) = 6.0 Rugged Gate Oxide Technology Lower Input CapacitanceID = 1.7 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 A (Max.) @ VDS = 800V Low RDS(ON) : 4.688 (Typ.)1231. Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic Value UnitsVDSS Drain-to-Source Voltage V800 Continuous Drain Current (TC=25 )1.7IDAContinuous Drain Current (TC=100 )1.11IDM Drain Current-Pulsed AO 6.8VGS Gate-to-Source Voltage_ V2EAS Single Pulsed Avalanche Energy O 216 mJIAR Avalanche Current 11.7 AOEAR Repetitive Avalanche Energy 1 4.5 mJOdv/dt Peak Diode Recovery dv/dt 32.0 V/nsOTotal Power Dissipation (TC=25 )45 WPDLinear Derating Factor0.36 W/ Operating Junction

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