View ssw1n50a datasheet:

Advanced Power MOSFETFEATURESBVDSS = 500 V Avalanche Rugged TechnologyRDS(on) = 5.5 Rugged Gate Oxide Technology Lower Input CapacitanceID = 1.5 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 500V2 Lower RDS(ON) : 4.046 (Typ.)112331. Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic Value UnitsVDSS Drain-to-Source Voltage V500Continuous Drain Current (TC=25 ) 1.5IDAContinuous Drain Current (TC=100 )0.971IDM Drain Current-Pulsed O 5 AVGS Gate-to-Source Voltage _ V2EAS Single Pulsed Avalanche Energy 113 mJOIAR Avalanche Current 11.5 AOEAR Repetitive Avalanche Energy 13.6 mJO3dv/dt Peak Diode Recovery dv/dt O 3.5 V/ns*Total Power Dissipation (TA=25 ) 3.1 WPD Total Power Dissipation (TC=25 )

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